Diffusion of boron in germanium at 800–900 °C revisited
نویسندگان
چکیده
منابع مشابه
Radiation-enhanced self- and boron diffusion in germanium
We report experiments on proton radiation-enhanced selfand boron (B) diffusion in germanium (Ge) for temperatures between 515 ◦C and 720 ◦C. Modeling of the experimental diffusion profiles measured by means of secondary ion mass spectrometry is achieved on the basis of the Frenkel pair reaction and the interstitialcy and dissociative diffusion mechanisms. The numerical simulations ascertain con...
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Declaration This thesis is a presentation of my original research work. Wherever contributions of others are involved, every effort is made to indicate this clearly, with due reference to the literature, and acknowledgement of collaborative research and discussions.Abstract Currently, the International Technology Roadmap for Semiconductors (ITRS) is targeting the 22nm technology node in accorda...
متن کاملGermanium diffusion in polysilicon emitters of SiGe heterojunction bipolar transistors fabricated by germanium implantation
A study is made of germanium diffusion in polysilicon emitters of SiGe heterojunction bipolar transistors made by germanium implantation. Implanted Ge is found to diffuse from the single-crystal silicon substrate into deposited polysilicon emitter layers during rapid thermal anneal at 1045 °C. Measurements of germanium diffusivity in polycrystalline silicon are reported at temperatures between ...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2020
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.5134537